Tunnel injection
id:
tunnel-injection-306-4120700
title:
Tunnel injection
text:
Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator. It is used to program NAND flash memory. The process used for erasing is called tunnel release. This injection is achieved by creating a large voltage difference between the gate and the body of the MOSFET. When VGB >> 0, electrons are injected into the floating gate. Whe
brand slug:
wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Tunnel_injection
date created:
date modified:
2022-12-25T01:58:59Z
main entity:
{"identifier":"Q7853312","url":"https://www.wikidata.org/entity/Q7853312"}
image:
fields total:
13
integrity:
13