Stress-induced leakage current
id:
stress-induced-leakage-current-256-1785970
title:
Stress-induced leakage current
text:
Stress-induced leakage current (SILC) is an increase in the gate leakage current of a MOSFET, used in semiconductor physics. It occurs due to defects created in the gate oxide during electrical stressing. SILC is perhaps the largest factor inhibiting device miniaturization. Increased leakage is a common failure mode of electronic devices.
brand slug:
wiki
category slug:
encyclopedia
description:
Increase in gate leakage current of MOSFETs
original url:
https://en.wikipedia.org/wiki/Stress-induced_leakage_current
date created:
date modified:
2020-02-09T00:19:59Z
main entity:
{"identifier":"Q7390375","url":"https://www.wikidata.org/entity/Q7390375"}
image:
fields total:
13
integrity:
14