Strained silicon directly on insulator
id:
strained-silicon-directly-on-insulator-295-17644278
title:
Strained silicon directly on insulator
text:
Strained silicon directly on insulator (SSDOI) is a procedure developed by IBM which removes the silicon germanium layer in the strained silicon process leaving the strained silicon directly on the insulator. In contrast, strained silicon on SGOI provides a strained silicon layer on a relaxed silicon germanium layer on an insulator, as developed by MIT.
brand slug:
wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Strained_silicon_directly_on_insulator
date created:
date modified:
2020-10-18T07:39:25Z
main entity:
{"identifier":"Q7621129","url":"https://www.wikidata.org/entity/Q7621129"}
image:
fields total:
13
integrity:
13