Selective area epitaxy
id:
selective-area-epitaxy-322-4500416
title:
Selective area epitaxy
text:
Selective area epitaxy is the local growth of epitaxial layer through a patterned amorphous dielectric mask deposited on a semiconductor substrate. Semiconductor growth conditions are selected to ensure epitaxial growth on the exposed substrate, but not on the dielectric mask. SAE can be executed in various epitaxial growth methods such as molecular beam epitaxy (MBE), metalorganic vapour phase epitaxy (MOVPE) and chemical beam epitaxy (CBE). By SAE, semiconductor nanostructures such as quantum
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wiki
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encyclopedia
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original url:
https://en.wikipedia.org/wiki/Selective_area_epitaxy
date created:
date modified:
2024-02-15T16:10:56Z
main entity:
{"identifier":"Q7447753","url":"https://www.wikidata.org/entity/Q7447753"}
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13
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