Schottky barrier
id:
schottky-barrier-201-16950323
title:
Schottky barrier
text:
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB. The value of ΦB depends on the combination of metal and semiconductor. Not all metal–semiconductor junctions form a rectifying Schottky barrier; a metal–semiconductor junction th
brand slug:
wiki
category slug:
encyclopedia
description:
Potential energy barrier in metal–semiconductor junctions
original url:
https://en.wikipedia.org/wiki/Schottky_barrier
date created:
date modified:
2023-11-10T15:43:12Z
main entity:
{"identifier":"Q2391942","url":"https://www.wikidata.org/entity/Q2391942"}
image:
{"content_url":"https://upload.wikimedia.org/wikipedia/commons/9/9c/Schottky_Diode_Section.JPG","width":1210,"height":627}
fields total:
13
integrity:
15