Reverse short-channel effect
id:
reverse-short-channel-effect-236-13869211
title:
Reverse short-channel effect
text:
In MOSFETs, reverse short-channel effect (RSCE) is an increase of threshold voltage with decreasing channel length; this is the opposite of the usual short-channel effect. The difference comes from changes in doping profiles used in modern small device manufacturing. RSCE is a result of non-uniform channel doping in modern processes. To combat drain-induced barrier lowering (DIBL), MOSFET substrate near source and drain region are heavily doped to reduce the width of the depletion region in the
brand slug:
wiki
category slug:
encyclopedia
description:
Electrical effect present in MOSFET circuits
original url:
https://en.wikipedia.org/wiki/Reverse_short-channel_effect
date created:
date modified:
2021-10-11T03:40:21Z
main entity:
{"identifier":"Q7318266","url":"https://www.wikidata.org/entity/Q7318266"}
image:
fields total:
13
integrity:
14