Plasma ashing
id:
plasma-ashing-202-7232887
title:
Plasma ashing
text:
In semiconductor manufacturing plasma ashing is the process of removing the photoresist (light sensitive coating) from an etched wafer. Using a plasma source, a monatomic (single atom) substance known as a reactive species is generated. Oxygen or fluorine are the most common reactive species. Other gases used are N2/H2 where the H2 portion is 2%. The reactive species combines with the photoresist to form ash which is removed with a vacuum pump. Typically, monatomic oxygen plasma is created by ex
brand slug:
wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Plasma_ashing
date created:
date modified:
2023-04-25T10:22:20Z
main entity:
{"identifier":"Q17075286","url":"https://www.wikidata.org/entity/Q17075286"}
image:
fields total:
13
integrity:
13