Moss–Burstein effect
id:
moss-burstein-effect-305-13732784
title:
Moss–Burstein effect
text:
The Moss-Burstein effect, also known as the Burstein–Moss shift, is the phenomenon in which the apparent band gap of a semiconductor is increased as the absorption edge is pushed to higher energies as a result of some states close to the conduction band being populated. This is observed for a degenerate electron distribution such as that found in some degenerate semiconductors and is known as a Moss–Burstein shift. The effect occurs when the electron carrier concentration exceeds the conduction
brand slug:
wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Moss%E2%80%93Burstein_effect
date created:
date modified:
2023-08-18T10:34:12Z
main entity:
{"identifier":"Q5000647","url":"https://www.wikidata.org/entity/Q5000647"}
image:
{"content_url":"https://upload.wikimedia.org/wikipedia/commons/f/fc/MBshift_for_wiki.jpg","width":873,"height":405}
fields total:
13
integrity:
14