Monolayer doping
id:
monolayer-doping-292-13077353
title:
Monolayer doping
text:
Monolayer doping (MLD) in semiconductor production is a well controlled, wafer-scale surface doping technique first developed at the University of California, Berkeley, in 2007. This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially at nanoscale, which is not easily obtained by other existing technologies. This technique is currently used for fabricating ultrashallow junctions (USJs) as the heavily doped source/drain (S/D) contacts of metal
brand slug:
wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Monolayer_doping
date created:
date modified:
2023-01-16T10:15:12Z
main entity:
{"identifier":"Q6901659","url":"https://www.wikidata.org/entity/Q6901659"}
image:
fields total:
13
integrity:
13