Low-energy plasma-enhanced chemical vapor deposition
id:
low-energy-plasma-enhanced-chemical-vapor-deposition-279-10888714
title:
Low-energy plasma-enhanced chemical vapor deposition
text:
Low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a plasma-enhanced chemical vapor deposition technique used for the epitaxial deposition of thin semiconductor films. A remote low energy, high density DC argon plasma is employed to efficiently decompose the gas phase precursors while leaving the epitaxial layer undamaged, resulting in high quality epilayers and high deposition rates.
brand slug:
wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Low-energy_plasma-enhanced_chemical_vapor_deposition
date created:
date modified:
2024-02-05T19:50:56Z
main entity:
{"identifier":"Q65053086","url":"https://www.wikidata.org/entity/Q65053086"}
image:
{"content_url":"https://upload.wikimedia.org/wikipedia/commons/e/e6/LEPECVD_plasma.png","width":6000,"height":4000}
fields total:
13
integrity:
14