Insulated-gate bipolar transistor
id:
insulated-gate-bipolar-transistor-187-8316344
title:
Insulated-gate bipolar transistor
text:
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate, the thyristor action is completely suppressed, and only the transistor action is permitted
brand slug:
wiki
category slug:
encyclopedia
description:
Type of solid state switch
original url:
https://en.wikipedia.org/wiki/Insulated-gate_bipolar_transistor
date created:
2002-10-18T15:30:46Z
date modified:
2024-09-08T11:39:13Z
main entity:
{"identifier":"Q176110","url":"https://www.wikidata.org/entity/Q176110"}
image:
{"content_url":"https://upload.wikimedia.org/wikipedia/commons/b/b5/IGBT_3300V_1200A_Mitsubishi.jpg","width":525,"height":371}
fields total:
13
integrity:
16