Indium nitride
id:
indium-nitride-269-4065768
title:
Indium nitride
text:
Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics. The bandgap of InN has now been established as ~0.7 eV depending on temperature. The effective electron mass has been recently determined by high magnetic field measurements, m* =0.055 m0. Alloyed with GaN, the ternary system InGaN has a direct bandgap span from the infrared to the ultraviolet. Currently there is research into developing solar cells using the
brand slug:
wiki
category slug:
encyclopedia
description:
Chemical compound
original url:
https://en.wikipedia.org/wiki/Indium_nitride
date created:
date modified:
2023-07-08T18:27:43Z
main entity:
{"identifier":"Q418616","url":"https://www.wikidata.org/entity/Q418616"}
image:
{"content_url":"https://upload.wikimedia.org/wikipedia/commons/8/8e/Wurtzite_polyhedra.png","width":1417,"height":1266}
fields total:
13
integrity:
15