Indium gallium zinc oxide

id: indium-gallium-zinc-oxide-268-18523569
title: Indium gallium zinc oxide
text: Indium gallium zinc oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O). IGZO thin-film transistors (TFT) are used in the TFT backplane of flat-panel displays (FPDs). IGZO-TFT was developed by Hideo Hosono's group at Tokyo Institute of Technology and Japan Science and Technology Agency (JST) in 2003 and in 2004. IGZO-TFT has 20–50 times the electron mobility of amorphous silicon, which has often been used in liquid-crystal displays (LCDs)
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original url: https://en.wikipedia.org/wiki/Indium_gallium_zinc_oxide
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date modified: 2024-03-01T18:44:10Z
main entity: {"identifier":"Q1661614","url":"https://www.wikidata.org/entity/Q1661614"}
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fields total: 13
integrity: 13

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