Indium gallium arsenide phosphide
id:
indium-gallium-arsenide-phosphide-197-10259587
title:
Indium gallium arsenide phosphide
text:
Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium arsenide, or indium phosphide. This compound has applications in photonic devices, due to the ability to tailor its band gap via changes in the alloy mole ratios, x and y. Indium phosphide-based photonic integrated circuits, or PICs, commonly use alloys of GaxIn1−xAsyP1−y to construct quantum wells, waveguides and other photonic structures,
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wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Indium_gallium_arsenide_phosphide
date created:
date modified:
2024-01-16T20:40:10Z
main entity:
{"identifier":"Q17027436","url":"https://www.wikidata.org/entity/Q17027436"}
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fields total:
13
integrity:
13