Indium gallium aluminium nitride
id:
indium-gallium-aluminium-nitride-198-18281994
title:
Indium gallium aluminium nitride
text:
Indium gallium aluminium nitride is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as metalorganic chemical vapour deposition (MOCVD), molecular-beam epitaxy (MBE), pulsed laser deposition (PLD), etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs.
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wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Indium_gallium_aluminium_nitride
date created:
date modified:
2023-04-17T16:39:28Z
main entity:
{"identifier":"Q16887253","url":"https://www.wikidata.org/entity/Q16887253"}
image:
fields total:
13
integrity:
13