Hydride vapour-phase epitaxy
id:
hydride-vapour-phase-epitaxy-289-4996549
title:
Hydride vapour-phase epitaxy
text:
Hydride vapour-phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides. Carrier gasses commonly used include ammonia, hydrogen and various chlorides. HVPE technology can significantly reduce the cost of production compare
brand slug:
wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Hydride_vapour-phase_epitaxy
date created:
date modified:
2024-02-05T19:52:14Z
main entity:
{"identifier":"Q1640174","url":"https://www.wikidata.org/entity/Q1640174"}
image:
fields total:
13
integrity:
13