Grown-junction transistor
id:
grown-junction-transistor-267-10923449
title:
Grown-junction transistor
text:
The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948, six months after the first bipolar point-contact transistor. The first germanium prototypes were made in 1949. Bell Labs announced Shockley’s grown-junction transistor on July 4, 1951. An NPN grown-junction transistor is made of a single crystal of semiconductor material which has two PN junctions grown into it. During the growth process, a seed
brand slug:
wiki
category slug:
encyclopedia
description:
Primitive type of bipolar junction transistor
original url:
https://en.wikipedia.org/wiki/Grown-junction_transistor
date created:
date modified:
2024-02-28T19:30:36Z
main entity:
{"identifier":"Q5611706","url":"https://www.wikidata.org/entity/Q5611706"}
image:
{"content_url":"https://upload.wikimedia.org/wikipedia/commons/d/d1/Grown-junction_NPN_transistor_type_ST2010.png","width":548,"height":436}
fields total:
13
integrity:
15