Gate oxide
id:
gate-oxide-187-13064393
title:
Gate oxide
text:
The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by thermal oxidation of the silicon of the channel to form a thin insulating layer of silicon dioxide. The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal–Grove model. A conduct
brand slug:
wiki
category slug:
encyclopedia
description:
Dielectric layer of a MOSFET isolating the gate terminal from the underlying silicon
original url:
https://en.wikipedia.org/wiki/Gate_oxide
date created:
2007-11-23T09:02:20Z
date modified:
2024-09-08T14:42:47Z
main entity:
{"identifier":"Q5527031","url":"https://www.wikidata.org/entity/Q5527031"}
image:
{"content_url":"https://upload.wikimedia.org/wikipedia/commons/8/8a/1957%28Figure_7%29-Gate_oxide_transistor_by_Frosch_and_Derrick.png","width":851,"height":371}
fields total:
13
integrity:
16