Gate dielectric
id:
gate-dielectric-187-11287986
title:
Gate dielectric
text:
A gate dielectric is a dielectric used between the gate and substrate of a field-effect transistor. In state-of-the-art processes, the gate dielectric is subject to many constraints, including:
- Electrically clean interface to the substrate
- High capacitance, to increase the FET transconductance
- High thickness, to avoid dielectric breakdown and leakage by quantum tunneling. The capacitance and thickness constraints are almost directly opposed to each other. For silicon-substrate FETs,
brand slug:
wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Gate_dielectric
date created:
2006-12-11T15:37:24Z
date modified:
2024-09-08T14:30:45Z
main entity:
{"identifier":"Q5527011","url":"https://www.wikidata.org/entity/Q5527011"}
image:
{"content_url":"https://upload.wikimedia.org/wikipedia/commons/7/75/1957%28Figure_9%29-Gate_oxide_transistor_by_Frosch_and_Derrick.png","width":841,"height":361}
fields total:
13
integrity:
15