Gas immersion laser doping
id:
gas-immersion-laser-doping-312-15838673
title:
Gas immersion laser doping
text:
Gas immersion laser doping (GILD) is a method of doping a semiconductor material such as silicon. In the case of doping silicon with boron to create a P-type semiconductor material, a thin wafer of silicon is placed in a containment chamber and is immersed in boron gas. A pulsed laser is directed at the silicon wafer and this results in localised melting and subsequent recrystallisation of the silicon wafer material, allowing boron atoms in the gas to diffuse into the molten sections of the sili
brand slug:
wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Gas_immersion_laser_doping
date created:
date modified:
2022-09-20T06:51:00Z
main entity:
{"identifier":"Q48969094","url":"https://www.wikidata.org/entity/Q48969094"}
image:
fields total:
13
integrity:
13