Float-zone silicon
id:
float-zone-silicon-265-14046555
title:
Float-zone silicon
text:
Float-zone silicon is very pure silicon obtained by vertical zone melting. The process was developed at Bell Labs by Henry Theuerer in 1955 as a modification of a method developed by William Gardner Pfann for germanium. In the vertical configuration molten silicon has sufficient surface tension to keep the charge from separating. The major advantages is crucibleless growth that prevents contamination of the silicon from the vessel itself and therefore an inherently high-purity alternative to bou
brand slug:
wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Float-zone_silicon
date created:
date modified:
2023-10-24T08:45:27Z
main entity:
{"identifier":"Q5459821","url":"https://www.wikidata.org/entity/Q5459821"}
image:
{"content_url":"https://upload.wikimedia.org/wikipedia/commons/7/73/Si-crystal_floatingzone.jpg","width":1500,"height":1800}
fields total:
13
integrity:
14