Extraordinary magnetoresistance
id:
extraordinary-magnetoresistance-239-3158229
title:
Extraordinary magnetoresistance
text:
Extraordinary magnetoresistance (EMR) is a geometrical magnetoresistance effect discovered in 2000, where the change in electrical resistance upon the application of a large magnetic field can be greater than 1,000,000% at room temperature. The effect occurs in semiconductor-metal hybrid systems when a transverse magnetic field is applied. Without a magnetic field the system is in a low-resistance state with most of the current flow directed through the metallic region. Upon the application of a
brand slug:
wiki
category slug:
encyclopedia
description:
Geometrical magnetoresistance effect
original url:
https://en.wikipedia.org/wiki/Extraordinary_magnetoresistance
date created:
date modified:
2023-07-10T18:55:55Z
main entity:
{"identifier":"Q18206966","url":"https://www.wikidata.org/entity/Q18206966"}
image:
{"content_url":"https://upload.wikimedia.org/wikipedia/commons/d/df/Diagram_of_a_Circular_EMR_System.png","width":645,"height":355}
fields total:
13
integrity:
15