Equivalent oxide thickness
id:
equivalent-oxide-thickness-272-14573137
title:
Equivalent oxide thickness
text:
An equivalent oxide thickness usually given in nanometers (nm) is the thickness of silicon oxide film that provides the same electrical performance as that of a high-κ material being used. The term is often used when describing field effect transistors, which rely on an electrically insulating pad of material between a gate and a doped semiconducting region. Device performance has typically been improved by reducing the thickness of a silicon oxide insulating pad. As the thickness of the insulat
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wiki
category slug:
encyclopedia
description:
original url:
https://en.wikipedia.org/wiki/Equivalent_oxide_thickness
date created:
date modified:
2021-02-28T18:28:16Z
main entity:
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fields total:
13
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13