Dynamic random-access memory
id:
dynamic-random-access-memory-168-2401976
title:
Dynamic random-access memory
text:
Dynamic random-access memory is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a
brand slug:
wiki
category slug:
encyclopedia
description:
Type of computer memory
original url:
https://en.wikipedia.org/wiki/Dynamic_random-access_memory
date created:
2002-07-29T08:04:33Z
date modified:
2024-08-30T23:21:56Z
main entity:
{"identifier":"Q189396","url":"https://www.wikidata.org/entity/Q189396"}
image:
{"content_url":"https://upload.wikimedia.org/wikipedia/commons/9/9b/MT4C1024-HD.jpg","width":10944,"height":5312}
fields total:
13
integrity:
16