Chemical beam epitaxy
id:
chemical-beam-epitaxy-198-14472485
title:
Chemical beam epitaxy
text:
Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular beams of reactive gases, typically as the hydride or a metalorganic. The term CBE is often used interchangeably with metal-organic molecular beam epitaxy (MOMBE). The nomenclature does differentiate between the two processes, howeve
brand slug:
wiki
category slug:
encyclopedia
description:
Semiconductor deposition technique
original url:
https://en.wikipedia.org/wiki/Chemical_beam_epitaxy
date created:
date modified:
2024-02-15T16:11:25Z
main entity:
{"identifier":"Q5090443","url":"https://www.wikidata.org/entity/Q5090443"}
image:
fields total:
13
integrity:
14